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Dated : 10/05/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2N5550 / 2N5551
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 50 mA
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
hFE
hFE
hFE
hFE
hFE
hFE
60
80
60
80
20
30
-
-
250
250
-
-
-
-
-
-
-
-
Collector Emitter Breakdown Voltage
at IC = 1 mA
ST 2N5550
ST 2N5551
V(BR)CEO
V(BR)CEO
140
160
-
-
V
V
Collector Base Breakdown Voltage
at IC = 100 µA
ST 2N5550
ST 2N5551
V(BR)CBO
V(BR)CBO
160
180
-
-
V
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
6
-
V
Collector Cutoff Current
at VCB = 100 V
at VCB = 120 V
ST 2N5550
ST 2N5551
ICBO
ICBO
-
-
100
50
nA
nA
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
50
nA
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
ST 2N5550
ST 2N5551
VCE sat
VCE sat
VCE sat
-
-
-
0.15
0.25
0.2
V
V
V
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
ST 2N5550
ST 2N5551
VBE sat
VBE sat
VBE sat
-
-
-
1
1.2
1
V
V
V
Gain Bandwidth Product
at VCE = 10 V, IC = 10 mA, f = 100 MHz
fT
100
300
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
-
6
pF
Noise Figure
at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550
ST 2N5551
NF
NF
-
-
10
8
dB
dB
Thermal Resistance Junction to Ambient
RthA
-
200
1)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.