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Dated : 13/09/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Collector Current (pulse)
ICP
7
A
Total Power Dissipation(Ta = 25 OC)
Ptot
1
W
Total Power Dissipation(TC = 25 OC)
Ptot
10
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
R
Q
P
E
hFE
hFE
hFE
hFE
hFE
60
100
160
200
30
-
-
-
-
-
120
200
320
400
-
-
-
-
-
-
Collector Cutoff Current
at VCB = 60 V
ICBO
-
-
1
µA
Emitter Cutoff Current
at VEB = 3 V
IEBO
-
-
1
µA
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VCEsat
-
-
0.5
V
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VBEsat
-
-
2
V
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
fT
-
90
-
MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
45
-
pF
E
B
C
TO-126 Plastic Package