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Dated : 22/03/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SD882T
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q,
P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Collector Current (pulse)
IC(pulse)
7
A
Total power dissipation (Ta = 25 OC)
Ptot
1
W
Total power dissipation (Tc = 25 OC)
Ptot
10
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-55 to +150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
R
Q
P
E
at VCE = 2 V, IC = 20 mA
hFE
hFE
hFE
hFE
hFE
60
100
160
200
30
-
-
-
-
-
120
200
320
400
-
-
-
-
-
-
Collector Cutoff Current
at VCB = 30 V
ICBO
-
-
1
µA
Emitter Cutoff Current
at VEB = 3 V
IEBO
-
-
1
µA
Output Capacitance
VCB = 10 V, f = 1 MHz
Cob
-
45
-
pF
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VBE(sat)
-
-
2
V
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VCE(sat)
-
-
0.5
V
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
fT
-
90
-
MHz
E
B
C
TO-126 Plastic Package