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Dated : 22/03/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SD1691T
NPN Silicon Epitaxial Power Transistor
For Low-Frequencey Power Amplifiers and
Mid-Speed Switching
The transistor is subdivided into three groups, M, L and
K, according to its DC-DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC(DC)
5
A
Base Current
IB(DC)
1
A
Collector Current (pulse)
1)
IC(pulse)
8
A
Total power dissipation (Ta = 25 OC)
Ptot
1.3
W
Total power dissipation (Tc = 25 OC)
Ptot
20
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
-55 to +150
O
C
1) PW≦10ms, duty cycle≦50%.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 2 A
Current Gain Group M
L
K
at VCE = 1 V, IC = 0.1 A
at VCE = 1 V, IC = 5 A
hFE
hFE
hFE
hFE
hFE
100
160
200
60
50
200
320
400
-
-
-
-
-
-
-
Collector Cutoff Current
at VCB = 50 V
ICBO
-
10
µA
Emitter Cutoff Current
at VEB = 7 V
IEBO
-
10
µA
Base Saturation Voltage
at IC = 2 A, IB = 0.2 A
VBE(sat)
-
1.2
V
Collector Saturation Voltage
at IC = 2 A, IB = 0.2 A
VCE(sat)
-
0.3
V
Turn-on time
Ton
-
1
µs
Storage time
Tstg
-
2.5
µs
Fall time
at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V
tf
-
1
µs
E
B
C
TO-126 Plastic Package