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Dated : 25/07/2003
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2N3416 / 2N3417
Characteristics at Tamb=25
OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=4.5V, IC=2mA
ST 2N3416
ST 2N3417
hFE
hFE
75
180
-
-
225
540
-
-
Small Signal Current Gain
at VCE=4.5V, IC=2mA, f =1kHz
ST 2N3416
ST 2N3417
hfe
hfe
75
180
-
-
-
-
-
-
Collector Cutoff Current
at VCB=25V
at VCB=18V, Ta=100℃
ICBO
ICBO
-
-
-
-
100
15
nA
μA
Emitter Cutoff Current
at VEB=5V
IEBO
-
-
100
nA
Collector Saturation Voltage
at IC=50mA, IB=3mA
VCE(sat)
-
-
0.3
V
Base Saturation Voltage
at IC=50mA, IB=3mA
VBE(sat)
0.6
-
1.3
V
Collector Emitter Breakdown Voltage*
at IC=10Ma
V(BR)CEO
50
-
-
V
Collector Base Breakdown Voltage
at IC=10μA
V(BR)CBO
50
-
-
V
Emitter Base Breakdown Voltage
at IE=10μA
V(BR)EBO
5
-
-
V
Thermal Resistance Junction to Ambient
RthA
-
-
200
OC /W
Thermal Resistance Junction to Case
RthC
-
-
83.3
OC /W
*Pulse Test : Pulse width≦300μs, Duty Cycle≦2%.