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Dated : 26/08/2005
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2N7000
Characteristics at TC=25 OC
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Off Characteristics
Drain-Source Breakdown Voltage
at VGS=0, ID=10μA
V(BR)DSS
60
-
-
V
Zero Gate Voltage Drain Current
at VDS=48V, VGS=0
at VDS=48V, VGS=0, TJ=125 OC
IDSS
-
-
-
-
1
1
μA
mA
Gate-Body Leakage Current, Forward
at VGSF=15V, VDS=0
IGSSF
-
-
10
nA
Gate-Body Leakage Current, Reverse
at VGSR=-15V, VDS=0
IGSSR
-
-
-10
nA
On Characteristics
1)
Gate Threshold Voltage
at VDS= VGS, ID=1mA
VGS(th)
0.8
-
3
V
Static Drain-Source On-Resistance
at VGS=10V, ID=500mA
at VGS=4.5V, ID=75mA
rDS(on)
-
-
-
-
5
6
Ohm
Drain-Source On-Voltage
at VGS=10V, ID=500mA
at VGS=4.5V, ID=75mA
VDS(on)
-
-
-
-
2.5
0.45
V
On-State Drain Current
at VGS=4.5V, VDS=10V
ID(on)
75
-
-
mA
Forward Transconductance
at VDS=10V, ID=200mA
gfs
100
-
-
µmhos
Dynamic Characteristics
Input Capacitance
at VDS=25V
Ciss
-
-
60
Output Capacitance
VGS=0
Coss
-
-
25
Reverse Transfer Capacitance
f=1MHz
Crss
-
-
5
pF
Switching Characteristics
1)
Turn-On Delay Time
at VDD=15V, ID=500mA,
RG=25Ω, RL=30Ω
ton
-
-
10
ns
Turn-Off Delay Time
Vgen=10V
toff
-
-
10
ns
1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.