Dated : 23/06/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
SD101A (1N6263)...SD101C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD101 Series is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
The SD101A is equivalent to the 1N6263.
This diode is also available in MiniMELF case with
type designation LL101A, B, C.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
SD101A
SD101B
SD101C
VRRM
60
50
40
V
Power Dissipation
Ptot
400
1)
mW
Maximum Single Cycle Surge, 10 s Square wave
IFSM
2
A
Junction Temperature
Tj
200
O
C
Storage Temperature Range
TS
- 55 to + 200
O
C
1) Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
at IR = 10 µA
SD101A
SD101B
SD101C
V(BR)R
60
50
40
-
-
-
V
Forward Voltage
at IF = 1 mA
at IF = 15 mA
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
VF
-
-
-
-
-
-
0.41
0.4
0.39
1
0.95
0.9
V
Reverse Leakage Current
at VR = 50 V
at VR = 40 V
at VR = 30 V
SD101A
SD101B
SD101C
IR
-
200
nA
Junction Capacitance
at VR = 0 V, f = 1 MHz
SD101A
SD101B
SD101C
Ctot
-
-
-
2
2.1
2.2
pF
Reverse Recovery Time
at IF = IR = 5 mA , recover to 0.1 IR
trr
-
1
ns
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
ST
"ST" Brand
Dimensions in mm
Black
Black
Black
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