Dated : 24/08/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BCW30
PNP Silicon Epitaxial Planar Transistor
general purpose switching and amplification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
32
V
Collector Emitter Voltage
-VCEO
32
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
100
mA
Peak Collector Current
-ICM
200
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
hFE
215
-
500
-
Collector Cutoff Current
at -VCB = 30 V
-ICBO
-
-
100
nA
Emitter Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
32
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
32
-
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
-VCE(sat)
-
-
0.3
V
Base Emitter Voltage
at -VCE = 5 V, -IC = 2 mA
-VBE
0.6
-
0.75
V
Transition Frequency
at -VCE = 5 V, IE = 10 mA, f = 100 MHz
fT
100
-
-
MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
CCBO
-
4.5
-
pF
SOT-23 Plastic Package
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