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EIA1111-2 датащит (Datasheet) 1 Page - Excelics Semiconductor, Inc.

№ деталь EIA1111-2
подробность  11.0-11.5 GHz 2-Watt Internally Matched Power FET
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производитель  EXCELICS [Excelics Semiconductor, Inc.]
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EIA1111-2
UPDATED 02/17/2006
11.0-11.5 GHz 2-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised February 2006
YYWW
ALL DIMENSIONS IN INCHES
.512
.382
.094
Excelics
.650±.008
.129
SN
GATE
.060 MIN.
.04
.070 ±.008
.004
.022
.060 MIN.
DRAIN
.319
FEATURES
11.0– 11.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34.0 dBm Output Power at 1dB Compression
11.0 dB Power Gain at 1dB Compression
32% Power Added Efficiency
Hermetic Metal Flange Package
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS
1
MIN
TYP
MAX
UNITS
P1dB
Output Power at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
33.0
34.0
dBm
G1dB
Gain at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
10.0
11.0
dB
∆G
Gain Flatness
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
±0.6
dB
PAE
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 800mA
f = 11.0-11.5GHz
32
%
Id1dB
Drain Current at 1dB Compression
f = 11.0-11.5GHz
900
1100
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
1400
1800
mA
VP
Pinch-off Voltage
VDS = 3 V, IDS = 14 mA
-1.0
-2.5
V
RTH
Thermal Resistance
3
10
11
oC/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12
8V
Vgs
Gate-Source Voltage
-5
-3V
Igsf
Forward Gate Current
21.6mA
7.2mA
Igsr
Reserve Gate Current
-3.6mA
-1.2mA
Pin
Input Power
32.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
oC
175
oC
Tstg
Storage Temperature
-65 to +175
oC
-65 to +175
oC
Pt
Total Power Dissipation
13W
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIA1111-2




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