1 / 2 page
Dated : 28/08/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching
applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
700
V
Collector Emitter Voltage
VCEO
400
V
Emitter Base Voltage
VEBO
9
V
Collector Current
IC
4
A
Power Dissipation (Ta = 25 OC)
Ptot
2
W
Power Dissipation (Tc = 25 OC)
Ptot
75
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 1 A
at VCE = 5 V, IC = 2 A
hFE
hFE
10
8
-
-
60
40
-
-
Collector Base Cutoff Current
at VCB = 700 V
ICBO
-
-
1
mA
Emitter Base Cutoff Current
at VEB = 9 V
IEBO
-
-
1
mA
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
400
-
-
V
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
at IC = 4 A, IB = 1 A
VCE(sat)
VCE(sat)
VCE(sat)
-
-
-
-
-
-
0.5
0.6
1
V
V
V
Base Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
VBE(sat)
VBE(sat)
-
-
-
-
1.2
1.6
V
V
Gain Bandwidth Product
at VCE = 10 V, IC = 500 mA, f = 1 MHz
fT
4
-
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz
Ccb
-
65
-
pF
TO-220 Plastic Package