1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

2N4036

2N4037

Unit

Collector – Emitter Voltage

VCEO

–65

–40

Vdc

Collector – Base Voltage

VCBO

–90

–60

Vdc

Emitter – Base Voltage

VEBO

– 7.0

– 7.0

Vdc

Base Current

IB

– 0.5

Adc

Collector Current — Continuous

IC

– 1.0

Adc

Continuous Power Dissipation

at or Below TC = 25°C

Linear Derating Factor

PD

5.0

28.6

5.0

28.6

Watts

mW/

°C

Continuous Power Dissipation

at or Below TA = 25°C

Linear Derating Factor

PD

1.0

5.72

1.0

5.72

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to +200

°C

Lead Temperature

1/16

″ from Case for 10 Seconds

TL

230

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

2N4036

2N4037

Unit

Thermal Resistance, Junction to Case

RqJC

35

35

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Sustaining Voltage(1)

(IC = – 100 mAdc, IB = 0)

2N4036

2N4037

VCEO(sus)

–65

–40

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = – 0.1 mAdc)

2N4037

V(BR)CBO

–60

—

Vdc

Collector Cutoff Current

(VCE = – 85 Vdc, VEB = – 1.5 Vdc)

2N4036

(VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C)

2N4037

ICEX

—

—

– 0.1

– 100

mAdc

Collector Cutoff Current

(VCB = – 90 Vdc, IE = 0)

2N4036

(VCB = – 60 Vdc, IE = 0)

2N4037

ICBO

—

—

– 1.0

– 0.25

µAdc

Emitter Cutoff Current

(VEB = – 7.0 Vdc, IC = 0)

2N4036

(VEB = – 5.0 Vdc, IC = 0)

2N4037

IEBO

—

—

–10

– 1.0

µAdc

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

Order this document

by 2N4036/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N4036

2N4037

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER