TLC272, TLC272A, TLC272B, TLC272Y, TLC277

LinCMOS

™ PRECISION DUAL OPERATIONAL AMPLIFIERS

SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994

2

POST OFFICE BOX 655303

AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

VIOmax

AT 25

°C

SMALL

OUTLINE

(D)

CHIP

CARRIER

(FK)

CERAMIC

DIP

(JG)

PLASTIC

DIP

(P)

TSSOP

(PW)

CHIP

FORM

(Y)

500

µV

TLC277CD

—

—

TLC277CP

—

—

0

°Cto70°c

500

µV

2 mV

TLC277CD

TLC272BCD

—

—

TLC277CP

TLC272BCP

—

—

0

°C to 70°c

5 mV

TLC272ACD

—

—

TLC272ACP

—

—

10mV

TLC272CD

—

—

TLC272CP

TLC272CPW

TLC272Y

500

µV

TLC277ID

—

—

TLC277IP

—

—

40

°Cto85°C

500

µV

2 mV

TLC277ID

TLC272BID

—

—

TLC277IP

TLC272BIP

—

—

– 40

°C to 85°C

5 mV

TLC272AID

—

—

TLC272AIP

—

—

10 mV

TLC272ID

—

—

TLC272IP

—

—

55

°Cto125°C

500

µV

TLC277MD

TLC277MFK

TLC277MJG

TLC277MP

—

—

– 55

°C to 125°C

µ

10 mV

TLC272MD

TLC272MFK

TLC272MJG

TLC272MP

—

—

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).

description (continued)

In general, many features associated with bipolar technology are available on LinCMOS

™ operational amplifiers

without the power penalties of bipolar technology. General applications such as transducer interfacing, analog

calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and

TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote

and inaccessible battery-powered applications. The common-mode input voltage range includes the negative

rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density

system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages

up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling

these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0

°C to 70°C. The I-suffix devices are characterized

for operation from – 40

°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of – 55

°C to 125°C.