1N4148

HIGH SPEED SWITCHING DIODE

PRV : 100 Volts

Io : 150 mA

FEATURES :

* Silicon Epitaxial Planar Diode

* High reliability

* Low reverse current

* Low forward voltage drop

* High speed switching

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-35 Glass Case

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.13 gram (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

VALUE

UNIT

Maximum Repetitive Peak Reverse Voltage

100

V

Maximum Reverse Voltage

75

V

Maximum Average Forward Current

150

1)

mA

Maximum Surge Forward Current at t < 1s and Tj = 25

°C

500

mA

Maximum Power Dissipation , Ta = 25

°C

mW

1.0

V

Maximum Reverse Current

25

nA

5

µA

°C

50

µA

Maximum Voltage Rise when switching ON

test with 50mA Pulses

tp = 0.1

µs, Rise Time <30ns fp = 5 to 100kHz

Maximum Reverse Recovery Time

Ω

Thermal Resistance Junction to Ambient Air

R

K/W

Junction Temperature Range

175

°C

Storage Temperature Range

- 65 to + 175

°C

Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)

Page 1 of 2

Rev. 03 : March 25, 2005

V

2.5

Trr

4

ns

350

1)

RATING

500

DO - 35

0.079(2.0 )max.

0.150 (3.8)

max.

0.020 (0.52)max.

Dimensions in inches and ( millimeters )

1.00 (25.4)

min.

1.00 (25.4)

min.