TLC27L1, TLC27L1A, TLC27L1B

LinCMOS

™ LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS154 – DECEMBER 1995

1

POST OFFICE BOX 655303

0.1

µV/Month, Including the First 30 Days

Specified Temperature Range:

0

°C to 70°C...3 V to 16 V

–40

°C to 85°C...4 V to 16 V

–55

°C to 125°C...5 V to 16 V

Extends Below the Negative Rail (C-Suffix

and I-Suffix Types)

f = 1 kHz

Rail

Available in Tape and Reel

description

The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage

drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable

amplifier. These devices use the Texas Instruments silicon-gate LinCMOS

™ technology, which provides

offset-voltage stability far exceeding the stability available with conventional metal-gate processes.

Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10

mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents,

in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good

choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available in LinCMOS

™ operational amplifiers,

without the power penalties of bipolar technology. General applications such as transducer interfacing, analog

calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The

devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and

inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.

The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up.

The TLC27L1 incorporates internal electrostatic-discharge (ESD) protection circuits that prevent functional

failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be

exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric

performance.

AVAILABLE OPTIONS

PACKAGE

TA

VIOmax

AT 25

°C

SMALL

OUTLINE

(D)

PLASTIC

DIP

(P)

2 mV

TLC27L1BCD

TLC27L1BCP

0

°C to 70°C

2 mV

5 mV

TLC27L1BCD

TLC27L1ACD

TLC27L1BCP

TLC27L1ACP

10 mV

TLC27L1CD

TLC27L1CP

2 mV

TLC27L1BID

TLC27L1BIP

–40

°C to 85°C

2 mV

5 mV

TLC27L1BID

TLC27L1AID

TLC27L1BIP

TLC27L1AIP

10 mV

TLC27L1ID

TLC27L1IP

–55

°C to 125°C

10 mV

TLC27L1MD

TLC27L1MP

The D package is available taped and reeled. Add R suffix to the device type

(e.g., TLC27L1BCDR).

Copyright

© 1995, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

1

2

3

4

8

7

6

5

OFFSET N1

IN –

IN +

GND

OUT

OFFSET N2

D OR P PACKAGE

(TOP VIEW)