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TPS2013APWP датащи(PDF) 5 Page - Texas Instruments |
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TPS2013APWP датащи(HTML) 5 Page - Texas Instruments |
5 / 22 page TPS2010A, TPS2011A, TPS2012A, TPS2013A POWER-DISTRIBUTION SWITCHES SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted) power switch PARAMETER TEST CONDITIONS† MIN TYP MAX UNIT VI(IN) = 5 V, TJ = 25°C, IO = 1.5 A 33 36 VI(IN) = 5 V, TJ = 85°C, IO = 1.5 A 38 46 VI(IN) = 5 V, TJ = 125°C, IO = 1.5 A 44 50 VI(IN) = 3.3 V, TJ = 25°C, IO = 1.5 A 37 41 VI(IN) = 3.3 V, TJ = 85°C, IO = 1.5 A 43 52 rDS(on) Static drain-source on-state resistance VI(IN) = 3.3 V, TJ = 125°C, IO = 1.5 A 51 61 m Ω rDS(on) Static drain-source on-state resistance VI(IN) = 5 V, TJ = 25°C, IO = 0.18 A 30 34 m Ω VI(IN) = 5 V, TJ = 85°C, IO = 0.18 A 35 41 VI(IN) = 5 V, TJ = 125°C, IO = 0.18 A 39 47 VI(IN) = 3.3 V, TJ = 25°C, IO = 0.18 A 33 37 VI(IN) = 3.3 V, TJ = 85°C, IO = 0.18 A 39 46 VI(IN) = 3.3 V, TJ = 125°C, IO = 0.18 A 44 56 t Rise time output VI(IN) = 5.5 V, CL = 1 µF, TJ = 25°C, RL = 10 Ω 6.1 ms tr Rise time, output VI(IN) = 2.7 V, CL = 1 µF, TJ = 25°C, RL = 10 Ω 8.6 ms tf Fall time output VI(IN) = 5.5 V, CL = 1 µF, TJ = 25°C, RL = 10 Ω 3.4 ms tf Fall time, output VI(IN) = 2.7 V, CL = 1 µF, TJ = 25°C, RL = 10 Ω 3 ms † Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. enable input ( EN ) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIH High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V VIL Low-level input voltage 4.5 V ≤ VI(IN) ≤ 5.5 V 0.8 V VIL Low-level in ut voltage 2.7 V ≤ VI(IN) ≤ 4.5 V 0.5 V II Input current EN = 0 V or EN = VI(IN) – 0.5 0.5 µA ton Turnon time CL = 100 µF, RL = 10 Ω 20 ms toff Turnoff time CL = 100 µF, RL = 10 Ω 40 ms current limit PARAMETER TEST CONDITIONS† MIN TYP MAX UNIT TPS2010A 0.22 0.3 0.4 IOS Short circuit output current TJ = 25°C, VI = 5.5 V, OUT connected to GND TPS2011A 0.66 0.9 1.1 A IOS Short-circuit output current OUT connected to GND, Device enable into short circuit TPS2012A 1.1 1.5 1.8 A Device enable into short circuit TPS2013A 1.65 2.2 2.7 † Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. |
Аналогичный номер детали - TPS2013APWP |
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Аналогичное описание - TPS2013APWP |
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