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TPS51113DRCT датащи(PDF) 2 Page - Texas Instruments |
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TPS51113DRCT датащи(HTML) 2 Page - Texas Instruments |
2 / 26 page ABSOLUTE MAXIMUM RATINGS (1) (2) ELECTROSTATIC DISCHARGE (ESD) PROTECTION TPS51113, TPS51163 SLUS864 – MAY 2009........................................................................................................................................................................................................ www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION(1) LEAD/BALL MSL PEAK ORDERABLE TYPE DRAWING PINS QTY ECO PLAN DEVICE FINISH TEMPERATURE TPS51113DRCR Green SON DRC 10 3000 CU NiPDAU Level-2-260C-1Year (RoHS and no Sb/Br) TPS51163DRCR TPS51113DRCT Green SON DRC 10 250 CU NiPDAU Level-2-260C-1Year (RoHS and no Sb/Br) TPS51163DRCT (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Over operating free-air temperature range (unless otherwise noted, all voltages are with respect to GND.) PARAMETER VALUE UNIT VDD –0.3 to 15 BOOT –0.3 to 30 BOOT, to SW (negative overshoot –5 V for t < 25 ns, –5.0 to 15 Input voltage range 125 V × ns/t for 25 ns < t< 100 ns) V BOOT, (negative overshoot –5 V for t < 25ns, –5.0 to 37 125 V × ns/t for 25 ns < t < 100 ns) All other pins –0.3 to 3.6 SW –0.3 to 22 SW, (negative overshoot –5 V for t < 25ns, –5.0 to 30 125 V × ns/t for 25 ns < t < 100 ns) HDRV –0.3 to 30 HDRV to SW (negative overshoot –5 V for t < 25 ns, –5.0 to 15 125 V × ns/t for 25 ns < t< 100 ns) Output voltage range HDRV (negative overshoot –5 V for t < 25ns, V –5.0 to 37 125 V × ns/t for 25 ns < t < 100 ns) LDRV_OC –0.3 to 15 LDRV_OC (negative overshoot –5 V for t < 25ns, –5.0 to 15 125 V × ns/t for 25 ns < t < 100 ns) PGOOD –0.3 to 15 All other pins –0.3 to 3.6 TJ Operating junction temperature –40 to 125 °C Tstg Storage junction temperature –55 to 150 (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to the network ground terminal unless otherwise noted. MIN TYP MAX UNIT Human Body Model (HBM) 2500 V Charged Device Model (CDM) 1500 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS51113 TPS51163 |
Аналогичный номер детали - TPS51113DRCT |
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Аналогичное описание - TPS51113DRCT |
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