2008. 10. 2

2/6

KF13N60N

Revision No : 1

ELECTRICAL CHARACTERISTICS (Tc=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

600

-

-

V

Breakdown Voltage Temperature Coefficient

-

0.63

-

V/

Drain Cut-off Current

-

-

10

A

Gate Threshold Voltage

2.0

-

4.0

V

Gate Leakage Current

-

-

100

nA

Drain-Source ON Resistance

-

0.47

0.56

Dynamic

Total Gate Charge

(Note4,5)

-

36

-

nC

Gate-Source Charge

-

8.5

-

Gate-Drain Charge

-

13.5

-

Turn-on Delay time

(Note4,5)

-

30

-

ns

Turn-on Rise time

-

40

-

Turn-off Delay time

-

115

-

Turn-off Fall time

-

55

-

Input Capacitance

-

1445

-

pF

Output Capacitance

-

185

-

Reverse Transfer Capacitance

-

20

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

13

A

Pulsed Source Current

-

-

52

Diode Forward Voltage

-

0.9

1.4

V

Reverse Recovery Time

dIs/dt=100A/ s

-

370

-

ns

Reverse Recovery Charge

-

4.6

-

C

Note 1) Repetivity rating : Pulse width limited by junction temperature.

13A, dI/dt

200A/

Note 4) Pulse Test : Pulse width

300

, Duty Cycle

2%.

Note 5) Essentially independent of operating temperature.