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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N4391 датащи(PDF) 9 Page - RHOPOINT COMPONENTS |
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2N4391 датащи(HTML) 9 Page - RHOPOINT COMPONENTS |
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9 / 14 page  01/99 B-53 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 30 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Gate, 3 Source Surface Mount SMPJ176, SMPJ177 At 25°C free air temperature: J176 J177 Process PJ99 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 30 30 V IG = 1 µA, VDS = ØV Gate Reverse Current IGSS 11 nA VGS = 20V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) 1 4 0.8 2.25 V VDS = – 15V, ID = – 10 nA Drain Saturation Current (Pulsed) IDSS – 2 – 35 – 1.5 – 20 mA VDS = – 15V, VGS = ØV Drain Cutoff Current ID(OFF) – 1 – 1 nA VDS = – 15V, VGS = 10V Dynamic Electrical Characteristics Max Max Drain Source ON Resistance rds(on) 250 300 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Dynamic Electrical Characteristics Typ Typ Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Source Gate Capacitance Cgs 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = ØV f = 1 MHz Switching Characteristics J176 J177 Turn ON Delay Time td(on) 15 20 ns VDD – 6 – 6 V Rise Time tr 20 25 ns VGS(OFF) 63 V Turn OFF Delay Time td(off) 15 20 ns RL 5.6 k 10 k Ω Fall Time tf 20 25 ns VGS(ON) ØØ V ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-53 |
Аналогичный номер детали - 2N4391 |
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Аналогичное описание - 2N4391 |
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