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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N4393 датащи(PDF) 4 Page - RHOPOINT COMPONENTS |
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2N4393 датащи(HTML) 4 Page - RHOPOINT COMPONENTS |
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4 / 14 page  01/99 B-49 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate Surface Mount SMPJ108, SMPJ109 At 25°C free air temperature: J108 J109 Process NJ450 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 3 – 3 nA VGS = – 15V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) – 3 – 10 – 2 – 6 V VDS = 5V, ID = 1 µA Drain Saturation Current (Pulsed) IDSS 80 40 mA VDS = 15V, VGS = ØV Drain Cutoff Current ID(OFF) 33 nA VDS = 5V, VGS = – 10V Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 812 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz Drain Gate Capacitance Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz Switching Characteristics Typ Typ Turn ON Delay Time td(on) 33 ns J108 J109 Rise Time tr 11 ns VDD 1.5 1.5 V Turn OFF Delay Time td(off) 44 ns VGS(OFF) – 12 – 7 V Fall Time tf 18 18 ns RL 150 150 Ω ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 1:02 PM Page B-49 |
Аналогичный номер детали - 2N4393 |
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Аналогичное описание - 2N4393 |
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