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Motorola Bipolar Power Transistor Device Data

NPN Darlington Power

Transistor

This Darlington transistor is a high voltage, high speed device for use in horizontal

deflection circuits in TV’s and CRT’s.

• High Voltage: VCEV = 330 or 400 V

• Fast Switching Speed:

tc = 1.0 µs (max)

• Low Saturation Voltage:

VCE(sat) = 1.5 V (max)

• Packaged in JEDEC TO–220AB

• Damper Diode VF is specified.

VF = 2.0 V (max)

MAXIMUM RATINGS

Rating

Symbol

BU806

Unit

Collector–Emitter Voltage

VCEO

200

Vdc

Collector–Emitter Voltage

VCEV

400

Vdc

Collector–Base Voltage

VCBO

400

Vdc

Emitter–Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

— Peak

IC

8.0

15

Adc

Emitter–Collector Diode Current

IF

10

Adc

Base Current

IB

2.0

Adc

Total Device Dissipation, TC = 25°C

Derate above TC = 25_C

PD

60

0.48

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.08

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

70

_C/W

Lead Temperature for Soldering Purposes,

1/8

″ from Case for 5.0 Seconds

TL

275

_C

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BU806/D

BU806

8.0 AMPERE

DARLINGTON

NPN POWER

TRANSISTORS

60 WATTS

200 VOLTS

CASE 221A–06

TO–220AB

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