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AM42-0002 датащи(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

номер детали AM42-0002
подробное описание детали  GaAs MMIC VSAT Power Amplifier 1.4 W 14.0 - 14.5 GHz
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производитель  MA-COM [M/A-COM Technology Solutions, Inc.]
домашняя страница  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

AM42-0002 датащи(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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GaAs MMIC VSAT Power Amplifier, 1.4 W
14.0 - 14.5 GHz
Rev. V6
AM42-0002
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Absolute Maximum Ratings
1,2,3
Parameter
Absolute Maximum
VDD
12 Volts
VGG
-10 Volts
Power Dissipation
13.2 W
RF Input Power
+23 dBm
Channel Temperature
150°C
Storage Temperature
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
3. Case Temperature (TC) = +25°C.
Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
PIN < 0 dBm
dB
19
22
Input VSWR
PIN < 0 dBm
Ratio
2.5:1
2.7:1
Output VSWR
PIN < 0 dBm
Ratio
2.7:1
Saturated Output Power
PIN = +14 dBm
dBm
30.5
31.5
Output Power at P1dB
dBm
31
29.5
Output IP3
Two +24 dB, output tones @ 1 MHz spacing
dBm
39
Power Added Efficiency
PIN = +14 dBm
%
22
Bias Current
PIN = +14 dBm
mA
800
1400
Thermal Resistance
25°C Heat Sink
°C/W
9.5
Detector Output Voltage
RL = 10 K Ω, POUT = +31dBm
V
+3.5
Typical Bias Configuration
4,5,6,7,8,9
4. Nominal bias is obtained by first connecting –5 volts to pin 4
(VGG), followed by connection +9 volts to pin 6 (VDD). Note
sequence.
5. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
6. No DC bias voltage appears at the RF ports.
7. The DC resistance at the input port is an open circuit and at
the output port is a short circuit.
8. For optimum IP3 performance, the VDD bypass capacitors
should be placed within 0.5 inches of pin 6.
9. Resistor and capacitors surrounding the amplifier are
suggestions and not included as part of the AM42-0002.


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