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FDS4141_F085 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS4141_F085 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDS4141_F085 Rev. A www.fairchildsemi.com 3 Electrical Characteristics T A = 25 oC unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25 oC, L = 6.2mH, I AS = -8.6A Symbol Parameter Test Conditions Min Typ Max Units ton Turn-On Time VDD = -20V, ID = -10.5A VGS = -10V, RGEN = 6Ω - - 25 ns td(on) Turn-On Delay Time - 9.7 - ns tr Rise Time - 4.4 - ns td(off) Turn-Off Delay Time - 41 - ns tf Fall Time - 11.6 - ns toff Turn-Off Time - - 84 ns VSD Source to Drain Diode Voltage ISD = -10.5A - -0.8 -1.3 V ISD = -2.1A - -0.7 -1.2 trr Reverse Recovery Time IF = -10.5A, dSD/dt = 100A/µs -26 34 ns Qrr Reverse Recovery Charge - 13.4 17.4 nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
Аналогичный номер детали - FDS4141_F085 |
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Аналогичное описание - FDS4141_F085 |
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