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FDS4897AC датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS4897AC датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page October 2008 ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS4897AC Rev.C FDS4897AC Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 m Ω P-Channel: -40 V, -5.2 A, 39 mΩ Features Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A 100% UIL Tested RoHS Compliant General Description These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications Inverter Power Supplies SO-8 Q1 Q2 Q1 Q2 S1 G1 S2 G2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 Pin 1 D1 D1 D2 D2 S2 S1 G1 G2 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 40 -40 V VGS Gate to Source Voltage ±20 ±20 V ID Drain Current - Continuous 6.1 -5.2 A - Pulsed 24 -24 PD Power Dissipation for Dual Operation 2.0 W Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.6 TA = 25 °C (Note 1b) 0.9 EAS Single Pulse Avalanche Energy (Note 3) 37 73 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case, (Note 1) 40 °C/W RθJC Thermal Resistance, Junction to Ambient, (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity FDS4897AC FDS4897AC SO-8 13 ” 12 mm 2500 units |
Аналогичный номер детали - FDS4897AC |
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Аналогичное описание - FDS4897AC |
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