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FDS8842NZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8842NZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page February 2009 ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C www.fairchildsemi.com 1 SO-8 D D D D S S S G Pin 1 G S S S D D D D FDS8842NZ N-Channel PowerTrench® MOSFET 40 V, 14.9 A, 7.0 m Ω Features Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant General Description The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications Synchronous Buck for Notebook Vcore and Server Notebook Battery Load Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 14.9 A -Pulsed 93 EAS Single Pulse Avalanche Energy (Note 4) 253 mJ PD Power Dissipation TA = 25 °C (Note 1a) 2.5 W Power Dissipation TA = 25 °C (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS8842NZ FDS8842NZ SO8 13 ’’ 12 mm 2500 units |
Аналогичный номер детали - FDS8842NZ |
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Аналогичное описание - FDS8842NZ |
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