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FDS8842NZ датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8842NZ датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C 35 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 µA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C -6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 14.9 A 5.6 7.0 m Ω VGS = 4.5 V, ID = 11.6 A 6.7 11.6 VGS = 10 V, ID = 14.9 A, TJ =125 °C 8.9 11.1 gFS Forward Transconductance VDS = 5 V, ID = 14.9 A 111 S Ciss Input Capacitance VDS = 15 V, VGS = 0 V, f = 1 MHz 2890 3845 pF Coss Output Capacitance 340 455 pF Crss Reverse Transfer Capacitance 220 330 pF Rg Gate Resistance f = 1 MHz 0.8 Ω td(on) Turn-On Delay Time VDD = 20 V, ID = 14.9 A, VGS = 10 V, RGEN = 6 Ω 13 23 ns tr Rise Time 714 ns td(off) Turn-Off Delay Time 34 54 ns tf Fall Time 510 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 20 V, ID = 14.9 A 52 73 nC Qg Total Gate Charge VGS = 0 V to 5 V 27 38 nC Qgs Gate to Source Charge 8.6 nC Qgd Gate to Drain “Miller” Charge 9.7 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 14.9 A 0.8 1.2 V VGS = 0 V, IS = 2.1 A 0.7 1.2 trr Reverse Recovery Time IF = 14.9 A, di/dt = 100 A/µs 26 42 ns Qrr Reverse Recovery Charge 15 27 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25 °C, L = 3 mH, IAS = 13 A, VDD = 40 V, VGS = 10 V. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a minimum pad. |
Аналогичный номер детали - FDS8842NZ |
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Аналогичное описание - FDS8842NZ |
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