поискавой системы для электроныых деталей |
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FDS8882 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS8882 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page ©2008 Fairchild Semiconductor Corporation FDS8882 Rev.C www.fairchildsemi.com 4 Figure 7. 0 3 6 9 12 15 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = 9 A VDD = 15 V VDD = 10 V VDD = 20 V Gate Charge Characteristics Figure 8. 0.1 1 10 30 20 100 1000 2000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 100 1 10 TJ = 100 oC TJ = 125 oC TJ = 25 oC t AV, TIME IN AVALANCHE (ms) 20 UnclampedInductive Switching Capability Figure 10. 25 50 75 100 125 150 0 2 4 6 8 10 RθJA = 50 oC/W VGS = 4.5 V VGS = 10 V T A , AMBIENT TEMPERATURE ( o C ) Maximum Continuous Drain Current vs Ambient Temperature Figure 11. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 s 100 us 10 ms DC 10 s 100 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC Figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC V GS = 10 V t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25 °C unless otherwise noted |
Аналогичный номер детали - FDS8882 |
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Аналогичное описание - FDS8882 |
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