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FDS8958B датащи(PDF) 3 Page - Fairchild Semiconductor

номер детали FDS8958B
подробное описание детали  Dual N & P-Channel PowerTrench짰 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m廓 Q2-P-Channel: -30 V, -4.5 A, 51 m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8958B датащи(HTML) 3 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FDS8958B Rev.B
NOTES:
1. RθJA is determined with the device mounted on a 1 in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. UIL condition: Starting TJ = 25 °C, L = 1 mH, IAS = 6 A, VDD = 27 V, VGS = 10 V . (Q1)
Starting TJ = 25 °C, L = 1 mH, IAS = -4 A, VDD = -27 V, VGS = -10 V. (Q2)
b) 135 °C/W when
mounted on a
minimun pad
a) 78 °C/W when
mounted on a 1 in2
pad of 2 oz copper
Electrical Characteristics T
J = 25 °C unless otherwise noted
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
VGS = 0 V, IS = -1.3 A
(Note 2)
Q1
Q2
0.8
-0.8
1.2
-1.2
V
trr
Reverse Recovery Time
Q1
IF = 6.4 A, di/dt = 100 A/µs
Q2
IF = -4.5 A, di/dt = 100 A/µs
Q1
Q2
17
20
30
36
ns
Qrr
Reverse Recovery Charge
Q1
Q2
6
8
12
16
nC


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