поискавой системы для электроныых деталей |
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FDS8958B датащи(PDF) 5 Page - Fairchild Semiconductor |
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FDS8958B датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 10 page ©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDS8958B Rev.B Figure 7. 02 4 6 8 10 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = 6.4 A VDD = 15 V VDD = 10 V VDD = 20 V Gate Charge Characteristics Figure 8. 0.1 1 10 30 10 100 1000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 9 TJ = 125 oC TJ = 25 oC t AV, TIME IN AVALANCHE (ms) 1 UnclampedInductive Switching Capability Figure 10. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 s 0.1 ms 10 ms DC 10 s 100 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC Forward Bias Safe Operating Area Figure 11. Single Pulse Maximum Power Dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 500 V GS = 10 V SINGLE PULSE RθJA = 135 o C/W T A = 25 o C t, PULSE WIDTH (sec) Typical Characteristics (Q1 N-Channel) T J = 25 °C unless otherwise noted |
Аналогичный номер детали - FDS8958B |
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Аналогичное описание - FDS8958B |
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