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FDS8958B датащи(PDF) 8 Page - Fairchild Semiconductor |
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FDS8958B датащи(HTML) 8 Page - Fairchild Semiconductor |
8 / 10 page ©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com FDS8958B Rev.B Typical Characteristics (Q2 P-Channel) T J = 25 °C unless otherwise noted Figure 21. Gate Charge Characteristics Figure 22. Capacitance vs Drain to Source Voltage Figure 23. Unclamped Inductive Switching Capability Figure 24. Ig vs Vgs Figure 25. Forward Bias Safe Operating Area Figure 26. Single Pulse Maximum Power Dissipation 03 69 12 15 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = -4.5 A VDD = -15 V VDD = -20 V VDD = -10 V 0.1 1 10 30 30 100 1000 2000 f = 1 MHz VGS = 0 V -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 0.01 0.1 1 10 1 2 3 4 5 6 7 8 TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) 0 5 10 15 20 25 30 35 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 VGS = 0V TJ = 25oC TJ = 125oC -VGS, GATE TO SOURCE VOLTAGE(V) 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1 s 0.1 ms 10 ms DC 10 s 100 ms 1 ms -VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 200 SINGLE PULSE RθJA = 135 oC/W TA = 25 oC V GS = -10 V t, PULSE WIDTH (sec) |
Аналогичный номер детали - FDS8958B |
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Аналогичное описание - FDS8958B |
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