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FDS8958B датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8958B датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS8958B Rev.B Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Symbol Parameter Test Conditions Type Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V Q1 Q2 30 -30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 24 -21 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V VGS = ±25 V, VDS = 0 V Q1 Q2 ±100 ±10 nA µA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = -250 µA Q1 Q2 1.0 -1.0 2.0 -1.9 3.0 -3.0 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 -6 5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 6.4 A VGS = 4.5 V, ID = 5.2 A VGS = 10 V, ID = 6.4A, TJ = 125 °C Q1 21 29 31 26 39 39 m Ω VGS = -10 V, ID = -4.5 A VGS = -4.5 V, ID = -3.3 A VGS = -10 V, ID = -4.5 A, TJ = 125 °C Q2 38 60 53 51 80 72 gFS Forward Transconductance VDD = 5 V, ID = 6.4 A VDD = -5 V, ID = -4.5 A Q1 Q2 20 10 S Ciss Input Capacitance Q1 VDS = 15 V, VGS = 0 V, f = 1 MHZ Q2 VDS = -15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 405 570 540 760 pF Coss Output Capacitance Q1 Q2 75 115 100 155 pF Crss Reverse Transfer Capacitance Q1 Q2 55 100 80 150 pF Rg Gate Resistance Q1 Q2 2.4 4.4 Ω td(on) Turn-On Delay Time Q1 VDD = 15 V, ID = 6.4 A, VGS = 10 V, RGEN = 6 Ω Q2 VDD = -15 V, ID = -4.5 A, VGS = -10 V, RGEN = 6 Ω Q1 Q2 4.3 6.0 10 12 ns tr Rise Time Q1 Q2 2.0 6.0 10 12 ns td(off) Turn-Off Delay Time Q1 Q2 12 17 22 30 ns tf Fall Time Q1 Q2 2.0 7.0 10 14 ns Qg(TOT) Total Gate Charge VGS = 10 V VGS = -10 V Q1 VDD = 15 V, ID = 6.4 A Q2 VDD = -15 V, ID = -4.5 A Q1 Q2 8.3 14 12 19 nC Qg(TOT) Total Gate Charge VGS = 4.5 V VGS = -4.5 V Q1 Q2 4.1 7.0 5.8 9.6 nC Qgs Gate to Source Charge Q1 Q2 1.3 1.9 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 1.7 3.6 nC |
Аналогичный номер детали - FDS8958B |
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Аналогичное описание - FDS8958B |
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