TPC8029 datasheet(5/7 Pages) TOSHIBA

номер детали	TPC8029

подробное описание детали	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPC8029

2009-09-29

5

60

70

80

160

120

VDS

VGS

24

12

020

40

4

12

16

20

0

10

20

30

50

40

8

10

30

50

VDD = 6V

0

(1)

(2)

0

0.4

0.8

1.2

1.6

0

40

80

160

120

2

−80

−40

0

40

0

2.5

0.5

1.5

2

1

3

Ciss

Coss

Crss

1000

10000

100

0.1

1

10

100

10

4.5

3

VGS = 0 V

1

0

−0.2

−0.4

−0.6

−0.8

−1.0

0.1

1000

1

10

100

VGS = 4.5 V

ID = 4.5,9,18 A

0

2

4

6

10

−80

−40

0

40

80

120

160

VGS = 10 V

8

RDS (ON) – Ta

IDR – VDS

Vth – Ta

PD – Ta

Common source

Pulse test

Common source

Ta

= 25°C

Pulse test

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Common source

VDS = 10 V

ID = 1mA

Pulse test

Common source

ID = 18 A

Ta

= 25°C

Pulse test

Ambient temperature Ta (°C)

Drain

−source voltage VDS (V)

Drain

−source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Total gate charge Qg (nC)

Dynamic input/output

characteristics

(1)Device mounted on a glass-epoxyboard

(a)(Note 2a)

(2)Device mounted on a glass-epoxyboard

(b)(Note 2b)

t

= 10 s

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