TPCF8402_09 datasheet(6/11 Pages) TOSHIBA

номер детали	TPCF8402

подробное описание детали	Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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6 / 11 page

TPCF8402

2009-09-29

6

P-channel

Drain-source voltage VDS (V)

Capacitance – VDS

-0.1

10

100

1000

-1

-3 -5

-10

-30 -50 -100

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Ambient temperature Ta (°C)

Vth – Ta

0

-0.5

-1.0

-1.5

-2.0

−80

−40

0

40

80

120

160

Common source

VDS = -10 V

ID = -1mA

Pulse test

Ambient temperature Ta (°C)

PD – Ta

0

0.1

Common source

Ta

= 25°C

Pulse test

0.3

0.5

1

3

5

10

0.9

1.2

VGS = 0 V

-5.0

-3.0

-1.0

-10

0.6

1.5

2.0

0.8

0

40

80

120

160

0.4

1.2

1.6

200

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

ｔ＝

5s

(1)

(2)

(3)

(4)

Total gate charge Qg (nC)

Dynamic input/output

characteristics

0

4

8

Common

source

ID = -3.2 A

Ta

= 25°C

Pulse test

VDD = -24V

VDS

VGS

12

16

-25

-10

0

-15

-20

-15

-10

0

-12

-6

-24

-12

VDD = -6V

-5

-30

160

−40

0

40

80

120

−80

150

120

60

30

0

90

VGS = -10V

VGS = -4.5V

ID = -0.8A, -1.6A, -3.2A

Common source

Pulse test

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