поискавой системы для электроныых деталей |
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TPCM8006 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TPCM8006 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCM8006 2008-05-23 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 12 A ⎯ 9 13.5 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 12 A ⎯ 5.5 7 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 12 A 23 46 ⎯ S Input capacitance Ciss ⎯ 1270 ⎯ Reverse transfer capacitance Crss ⎯ 240 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 380 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-on time ton ⎯ 20 ⎯ Fall time tf ⎯ 14 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 38 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 26 ⎯ Gate-source charge 1 Qgs1 ⎯ 4.5 ⎯ Gate-drain (“Miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 25 A ⎯ 8.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 75 A Forward voltage (diode) VDSF IDR = 25 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 12A VOUT |
Аналогичный номер детали - TPCM8006 |
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Аналогичное описание - TPCM8006 |
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