TPCM8006 datasheet(3/7 Pages) TOSHIBA

номер детали	TPCM8006

подробное описание детали	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCM8006

2008-05-23

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

10

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

V

VGS = 4.5 V, ID = 12 A

⎯

9

13.5

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 12 A

⎯

5.5

7

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 12 A

23

46

⎯

S

Input capacitance

Ciss

⎯

1270

⎯

Reverse transfer capacitance

Crss

⎯

240

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

380

⎯

pF

Rise time

tr

⎯

11

⎯

Turn-on time

ton

⎯

20

⎯

Fall time

tf

⎯

14

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

38

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

26

⎯

Gate-source charge 1

Qgs1

⎯

4.5

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 25 A

⎯

8.2

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

75

A

Forward voltage (diode)

VDSF

IDR = 25 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 15 V

0 V

VGS

10 V

ID = 12A

VOUT

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