TPCM8102 datasheet(3/7 Pages) TOSHIBA

номер детали	TPCM8102

подробное описание детали	Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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TPCM8102

2008-03-21

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−13

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−0.8

⎯

−2.0

V

VGS = −4 V, ID = −12 A

⎯

11

16

Drain-source ON-resistance

RDS (ON)

VGS = −10 V, ID = −12 A

⎯

6.0

7.7

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −12 A

22

44

⎯

S

Input capacitance

Ciss

⎯

2450

⎯

Reverse transfer capacitance

Crss

⎯

530

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0V, f = 1MHz

⎯

740

⎯

pF

Rise time

tr

⎯

13

⎯

Turn-on time

ton

⎯

22

⎯

Fall time

tf

⎯

145

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

340

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

60

⎯

Gate-source charge 1

Qgs1

⎯

11

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −25 A

⎯

19

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

-75

A

Forward voltage (diode)

VDSF

IDR = −25 A, VGS = 0 V

⎯

1.2

V

VDD ≈ −15 V

0 V

VGS

−10 V

ID = −12 A

VOUT

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