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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS51513RHB датащи(PDF) 4 Page - Texas Instruments |
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TPS51513RHB датащи(HTML) 4 Page - Texas Instruments |
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4 / 37 page  TPS51513 SLUS956 – JUNE 2009 ...................................................................................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS (continued) over recommended free-air temperature range, V5IN = V5FILT = 5.0V, GSNS = PGND = GND, VSNS = VCORE (Unless otherwise noted). PARAMETER CONDITIONS MIN TYP MAX UNIT CURRENT SENSE: OVERCURRENT, ZERO CROSSING AND VOLTAGE POSITIONING ICS CS input bias current CSP and CSN –1.0 1.0 µA Zero crossing comp. internal VZXOFF CSP–CSN –1.5 0.7 mV offset Droop amplifier GM-DROOP VSNS = 1 V 485 500 519 µS transconductance VDCLAMPN Droop amplifier clamp voltage VREF – VDROOP 46 mV VDCLAMPP Droop amplifier clamp voltage VDROOP – VREF 600 mV ACSINT Internal current sense gain Gain from CSP - CSN to modulator 5.92 6 6.06 V/V TRIPSEL = GND; RSLEW tied to GND 10.1 11.4 12.8 TRIPSEL = REF; RSLEW tied to GND 12.9 14.0 15.4 TRIPSEL = 3.3 V; RSLEW tied to GND 16.1 17.4 18.8 TRIPSEL = V5FILT; RSLEW tied to GND 20.4 21.7 23.2 OCP voltage set VOCPP mV (Valley current limit) TRIPSEL = GND; RSLEW tied to VREF 25.1 26.7 28.5 TRIPSEL = REF; RSLEW tied to VREF 31.4 33.3 35.3 TRIPSEL = 3.3 V; RSLEW tied to VREF 39.2 41.5 43.8 TRIPSEL = V5FILT; RSLEW tied to VREF 50.4 53.1 55.7 TRIPSEL = GND; RsLEW tied to GND 14.0 15.6 17.4 TRIPSEL = REF; RSLEW tied to GND 17.2 19.0 20.4 TRIPSEL = 3.3 V; RSLEW tied to GND 21.3 23.1 24.6 TRIPSEL = V5FILT; RSLEW tied to GND 28.1 29.7 31.1 Negative OCP voltage set (valley VOCPN mV current limit) TRIPSEL = GND; RSLEW tied to VREF 34.5 36.3 38.0 TRIPSEL = REF; RSLEW tied to VREF 42.9 44.6 46.1 TRIPSEL = 3.3 V; RSLEW tied to VREF 54.3 56.2 57.9 TRIPSEL = V5FILT; RSLEW tied to VREF 67.6 69.4 71.2 DRIVERS: HIGH-SIDE, LOW-SIDE, CROSS CONDUCTION PREVENTION AND BOOST RECTIFIER VBST – LL = 5 V, ‘HI’ State VBST – VDRVH = 0.9 2.5 0.1 V RDRVH DRVH on-resistance Ω VBST – LL = 5 V, ‘LO’ State VDRVH – VLL = 0.7 2.5 0.1 V IDRVH DRVH sink/source current(1) DRVH forced to 2.5 V, VBST – LL forced to 5 V 2.2 A DRVH 10% to 90% or 90% to 10%, tDRVH DRVH transition time 15 25 ns CDRVH = 3 nF ‘HI’ State, V5IN – VDRVL = 0.1 V 0.7 2 RDRVL DRVL on-resistance Ω ‘LO’ State, VDRVL – PGND = 0.1 V 0.45 1 DRVL forced to 2.5 V, Source 2.7 A IDRVL DRVL Sink/Source current(1) DRVL forced to 2.5 V, Sink 8 A DRVL 90% to 10%, CDRVL = 3 nF 12 25 tDRVL DRVL transition time ns DRVL 10% to 90%, CDRVL = 3 nF 12 25 LL falls to 1 V to DRVL rises to 1 V 15 19 25 tNONOVLP Driver non-overlap time ns DRVL falls to 1 V to DRVH rises to 1 V 22 27 35 VFBST BST rectifier forward voltage V5IN – VBST, IF=5 mA, TA = 25°C 0.6 0.7 0.8 V IBSTLK BST rectifier leakage current VVBST = 34 V, VLL=28 V 0.1 1 µA (1) Ensured by design. Not production tested. 4 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS51513 |
Аналогичный номер детали - TPS51513RHB |
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Аналогичное описание - TPS51513RHB |
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