2SA1162YT1 datasheet(2/6 Pages) ONSEMI

номер детали	2SA1162YT1

подробное описание детали	General Purpose Amplifier Transistors

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производитель	ONSEMI [ON Semiconductor]

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2SA1162GT1, 2SA1162YT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)

V(BR)CEO

50

−

Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

V(BR)CBO

50

−

Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

7.0

−

Vdc

Collector−Base Cutoff Current (VCB = 50 Vdc, IE = 0)

ICBO

−

0.1

mAdc

Emitter Cut−off Current (VEB = 5 V, IC = 0 V)

IEBO

−

0.1

mA

Collector−Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0)

ICEO

−

0.1

2.0

mAdc

DC Current Gain (Note 1)

(VCE = 6.0 Vdc, IC = 2.0 mAdc)

2SA1162YT1

2SA1162GT1

hFE

120

200

240

400

−

Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.3

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = 1.0 mA, VCE = 10.0 V, f = 10 MHz)

fT

80

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

7.0

pF

Noise Figure

(IC = 0.1 mA, VCE = 6.0 Vdc, RS = 10 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

1. Pulse Test: Pulse Width

≤ 300 ms, D.C. ≤ 2%.

Аналогичный номер детали - 2SA1162YT1

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SA1162	153Kb / 2P	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
SHENZHEN YONGERJIA INDU...	2SA1162	98Kb / 1P	PNP EPITAXIAL SILICON TRANSISTOR
TRANSYS Electronics Lim...	2SA1162	69Kb / 1P	Plastic-Encapsulated Transistors
Toshiba Semiconductor	2SA1162	189Kb / 3P	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba Semiconductor	2SA1162	391Kb / 3P	Audio Frequency General Purpose Amplifier Applications

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Аналогичное описание - 2SA1162YT1

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MSA1162GT1	47Kb / 2P	General Purpose Amplifier Transistors January, 2006 ??Rev. 5
	MSA1162GT1G	92Kb / 3P	General Purpose Amplifier Transistors October, 2013 ??Rev. 7
	2SA1576ART1	35Kb / 2P	General Purpose Amplifier Transistors July, 2004 ??Rev. 2
	MSA1162GT1	44Kb / 4P	General Purpose Amplifier Transistors September, 2003 ??Rev. 4
AiT Semiconductor Inc.	MMBTA13L	771Kb / 8P	GENERAL PURPOSE TRANSISTORS DARLINGTON AMPLIFIER TRANSISTORS REV1.0
First Silicon Co., Ltd	MMSTA05	469Kb / 4P	NPN General Purpose Amplifier transistors
ON Semiconductor	MMBT3904WT1	296Kb / 12P	GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
	2SC4617	128Kb / 6P	General Purpose Amplifier Transistors(NPN Silicon) November, 2001 ??Rev. 3
	2SC4617	48Kb / 4P	NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT July, 2004 ??Rev. 4
Advanced Power Technolo...	MS3302	152Kb / 4P	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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