SS12T3 datasheet(1/5 Pages) ONSEMI

номер детали	SS12T3

подробное описание детали	12 V, 1 A, Low VCE(sat) PNP Transistor

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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September, 2007 - Rev. 0

1

Publication Order Number:

NSS12100M3/D

NSS12100M3T5G

12 V, 1 A, Low VCE(sat)

PNP Transistor

ON Semiconductor's e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical application are DC-DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU's control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

• High Continuous Current Capability (1 A)

• Low VCE(sat) (150 mV Typical @ 500 mA)

• Small Size 1.2 mm x 1.2 mm

• This is a Pb-Free Device

Benefits

• High Specific Current and Power Capability Reduces Required PCB Area

• Reduced Parasitic Losses Increases Battery Life

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector‐Emitter Voltage

VCEO

-12

Vdc

Collector‐Base Voltage

VCBO

-12

Vdc

Emitter‐Base Voltage

VEBO

-5.0

Vdc

Collector Current - Continuous

Collector Current - Peak

IC

ICM

-1.0

-3.0

Adc

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

12 VOLTS, 1.0 AMPS

PNP LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 350 mW

Device

Package

Shipping†

ORDERING INFORMATION

SOT-723

CASE 631AA

STYLE 1

MARKING

DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

NSS12100M3T5G

SOT-723

(Pb-Free)

8000/

Tape & Reel

VE = Specific Device Code

M

= Date Code

VE M

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3

2

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Аналогичный номер детали - SS12T3

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ON Semiconductor	SS12T3	63Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
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