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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BDX66A датащи(PDF) 1 Page - Comset Semiconductor |
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BDX66A датащи(HTML) 1 Page - Comset Semiconductor |
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1 / 4 page  COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX66 60 BDX66A 80 BDX66B 100 -VCEO Collector-Emitter Voltage BDX66C 120 V BDX66 60 BDX66A 80 BDX66B 100 -VCBO Collector-Base Voltage BDX66C 120 V -VEBO Emitter-Base Voltage BDX66 BDX66A BDX66B BDX66C 5.0 V -IC(RMS) BDX66 BDX66A BDX66B BDX66C 16 -IC Collector Current -ICM BDX66 BDX66A BDX66B BDX66C 20 A -IB Base Current BDX66 BDX66A BDX66B BDX66C 0.25 A PT Power Dissipation @ TC = 25° BDX66 BDX66A BDX66B BDX66C 150 Watts W/°C TJ Junction Temperature TS Storage Temperature BDX66 BDX66A BDX66B BDX66C -55 to +200 °C High current power darlingtons designed for power amplification and switching applications. PNP SILICON DARLINGTONS |
Аналогичный номер детали - BDX66A |
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Аналогичное описание - BDX66A |
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