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KF60N06P датащи(PDF) 2 Page - KEC(Korea Electronics)

номер детали KF60N06P
подробное описание детали  N CHANNEL MOS FIELD EFFECT TRANSISTOR
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производитель  KEC [KEC(Korea Electronics)]
домашняя страница  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF60N06P датащи(HTML) 2 Page - KEC(Korea Electronics)

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2009. 12.21
2/6
KF60N06P
Revision No : 0
2
PRODUCT NAME
LOT NO
1
901
2
KF60N06
P
1
Marking
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
60
-
-
V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS/ΔTj
ID=250μA, Referenced to 25℃
-
0.08
-
V/℃
Drain Cut-off Current
IDSS
VDS=60V, VGS=0V,
-
-
10
μA
Gate Threshold Voltage
Vth
VDS=VGS, ID=250μA
2
-
4
V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
-
-
±100
nA
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=30A
-
11.5
13.2
mΩ
Dynamic
Total Gate Charge
Qg
VDS=48V, ID=60A
VGS=10V
(Note4,5)
-
48
-
nC
Gate-Source Charge
Qgs
-
9.2
-
Gate-Drain Charge
Qgd
-
19
-
Turn-on Delay time
td(on)
VDD=30V
ID=60A
RG=25Ω
(Note4,5)
-
35
-
ns
Turn-on Rise time
tr
-
75
-
Turn-off Delay time
td(off)
-
100
-
Turn-off Fall time
tf
-
75
-
Input Capacitance
Ciss
VDS=25V, VGS=0V, f=1.0MHz
-
1860
-
pF
Output Capacitance
Coss
-
490
-
Reverse Transfer Capacitance
Crss
-
92
-
Source-Drain Diode Ratings
Continuous Source Current
IS
VGS<Vth
-
-
60
A
Pulsed Source Current
ISP
-
-
240
Diode Forward Voltage
VSD
IS=60A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=60A, VGS=0V,
dIs/dt=100A/μ
s
-
70
-
ns
Reverse Recovery Charge
Qrr
-
180
-
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =120μ
H, IS=60A, VDD=30V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤60A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.


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