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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD17306Q5A датащи(PDF) 1 Page - Texas Instruments |
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CSD17306Q5A датащи(HTML) 1 Page - Texas Instruments |
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1 / 10 page  1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 TC = 25°C TC = 125°C G006 ID = 22A Qg - Gate Charge - nC 0 5 10 15 20 0 1 2 3 4 5 6 7 8 G003 ID = 22A VDS = 15V CSD17306Q5A www.ti.com SLPS253 – FEBRUARY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17306Q5A 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V • Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 11.8 nC • Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.4 nC • Avalanche Rated VGS = 3V 4.2 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V 3.3 m Ω • Pb Free Terminal Plating VGS = 8V 2.9 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.1 V • Halogen Free • SON 5-mm × 6-mm Plastic Package Text Added 4 Spacing ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • Notebook Point of Load SON 5-mm × 6-mm 13-Inch Tape and CSD17306Q5A 2500 Plastic Package Reel Reel • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems Text Added 4 Spacing ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT The NexFET™ power MOSFET has been designed VDS Drain to Source Voltage 30 V to minimize losses in power conversion applications, VGS Gate to Source Voltage +10 / –8 V and optimized for 5V gate drive applications. Continuous Drain Current, TC = 25°C 100 A ID Top View Continuous Drain Current(1) 24 A IDM Pulsed Drain Current, TA = 25°C (2) 155 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, Single Pulse EAS 274 mJ ID = 74A, L = 0.1mH, RG = 25Ω (1) Typical RqJA = 39°C/W on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% Text 4 Spacing Text 4 Spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - CSD17306Q5A |
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Аналогичное описание - CSD17306Q5A |
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