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2SD1468S датащи(PDF) 1 Page - Rohm

номер детали 2SD1468S
подробное описание детали  Muting Transistor (15V, 1A)
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производитель  ROHM [Rohm]
домашняя страница  http://www.rohm.com
Logo ROHM - Rohm

2SD1468S датащи(HTML) 1 Page - Rohm

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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
Muting Transistor (15V, 1A)
2SD1468S
Features
Dimensions (Unit : mm)
1) Low saturation voltage, typically VCE(sat) = 0.08V at
Ic / IB = 500mA / 500
A.
2) Ideal for low voltage, high current drives.
3) High DC current gain and high current.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
30
15
5
1
0.3
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
30
15
5
50
0.08
150
15
0.5
0.5
0.4
30
V
V
V
μA
μA
V
MHz
pF
IC
=50μA
IC
=1mA
IE
=50μA
VCB
=20V
VEB
=4V
IC/IB
=0.5mA/50mA
hFE
120
390
VCE
/IC
=3V/0.1A
VCE
=5V , IE= −50mA , f=100MHz
VCE
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current transfer ratio
Packaging specifications and hFE
Type
2SD1468S
SPT
QRS
5000
Package
hFE
TP
Code
Basic ordering unit (pieces)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
5.0
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base


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