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2009 ROHM Co., Ltd. All rights reserved.

2009.10 - Rev.A

Data Sheet

ES6U1

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit

D.U.T.

Fig.1-2 Switching Waveforms

90%

10%

50%

50%

Pulse Width

tf

10%

90%

10%

90%

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

FIg.2-2 Gate Charge Waveform

Charge

Notice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and

increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.