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FDS6898AZ датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6898AZ датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 21 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 10 µA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 1 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3.5 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 9.4 A VGS = 2.5 V, ID = 8.3 A VGS = 4.5 V, ID = 9.4 A,TJ = 125°C 10 13 14 14 18 21 mΩ ID(on) On–State Drain Current VGS = 4.5V, VDS = 5 V 19 A gFS Forward Transconductance VDS = 5 V, ID = 9.4 A 47 S Dynamic Characteristics Ciss Input Capacitance 1821 pF Coss Output Capacitance 440 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 208 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 15 27 ns td(off) Turn–Off Delay Time 34 55 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 16 29 ns Qg Total Gate Charge 16 23 nC Qgs Gate–Source Charge 3 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 9.4 A, VGS = 4.5 V 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied FDS 6898AZ_F085 Rev. A www.fairchildsemi.com 2 |
Аналогичный номер детали - FDS6898AZ |
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Аналогичное описание - FDS6898AZ |
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