поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDS6898AZ датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6898AZ
подробное описание детали  Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6898AZ датащи(HTML) 2 Page - Fairchild Semiconductor

  FDS6898AZ Datasheet HTML 1Page - Fairchild Semiconductor FDS6898AZ Datasheet HTML 2Page - Fairchild Semiconductor FDS6898AZ Datasheet HTML 3Page - Fairchild Semiconductor FDS6898AZ Datasheet HTML 4Page - Fairchild Semiconductor FDS6898AZ Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 µA
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
21
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
10
µA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–10
µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
0.5
1
1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–3.5
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 9.4 A
VGS = 2.5 V, ID = 8.3 A
VGS = 4.5 V, ID = 9.4 A,TJ = 125°C
10
13
14
14
18
21
mΩ
ID(on)
On–State Drain Current
VGS = 4.5V,
VDS = 5 V
19
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 9.4 A
47
S
Dynamic Characteristics
Ciss
Input Capacitance
1821
pF
Coss
Output Capacitance
440
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
208
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
10
20
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
34
55
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
16
29
ns
Qg
Total Gate Charge
16
23
nC
Qgs
Gate–Source Charge
3
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 9.4 A,
VGS = 4.5 V
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.7
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
FDS
6898AZ_F085 Rev. A
www.fairchildsemi.com
2


Аналогичный номер детали - FDS6898AZ

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS6898AZ FAIRCHILD-FDS6898AZ Datasheet
77Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ_F085 FAIRCHILD-FDS6898AZ_F085 Datasheet
332Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
More results

Аналогичное описание - FDS6898AZ

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS6812A FAIRCHILD-FDS6812A Datasheet
79Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A FAIRCHILD-FDS6894A Datasheet
82Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892AZ FAIRCHILD-FDS6892AZ Datasheet
78Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912_0007 FAIRCHILD-FDS6912_0007 Datasheet
76Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ_F085 FAIRCHILD-FDS6898AZ_F085 Datasheet
332Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892A FAIRCHILD-FDS6892A Datasheet
80Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A FAIRCHILD-FDS6898A Datasheet
81Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894AZ FAIRCHILD-FDS6894AZ Datasheet
77Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ FAIRCHILD-FDS6898AZ Datasheet
77Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912 FAIRCHILD-FDS6912 Datasheet
219Kb / 8P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com