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FDS8949 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS8949
подробное описание детали  Dual N-Channel Logic Level PowerTrench짰 MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8949 датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS8949
_F085 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
33
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
µA
TJ = 55°C
10
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V,VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
1.9
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-4.6
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 6A
21
29
m
VGS = 4.5V, ID = 4.5A
26
36
VGS = 10V, ID = 6A,TJ = 125°C
29
43
gFS
Forward Transconductance
VDS = 10V,ID = 6A
22
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 20V, VGS = 0V,
f = 1MHz
715
955
pF
Coss
Output Capacitance
105
140
pF
Crss
Reverse Transfer Capacitance
60
90
pF
Rg
Gate Resistance
f = 1MHz
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
9
18
ns
tr
Rise Time
5
10
ns
td(off)
Turn-Off Delay Time
23
37
ns
tf
Fall Time
3
6
ns
Qg
Total Gate Charge
VDS = 20V, ID = 6A,VGS = 5V
7.7
11
nC
Qgs
Gate to Source Gate Charge
2.4
nC
Qgd
Gate to Drain “Miller”Charge
2.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2)
0.8
1.2
V
trr
Reverse Recovery Time (note 3)
IF = 6A, diF/dt = 100A/µs
17
26
ns
Qrr
Reverse Recovery Charge
7
11
nC
and Maximum Ratings
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V.
Scale 1:1 on letter size paper
a) 81°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimum pad .


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