74AUP1G58 datasheet(9/19 Pages) NXP

номер детали	74AUP1G58

подробное описание детали	Low-power configurable multiple function gate

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9 / 19 page

74AUP1G58_3

Product data sheet

Rev. 03 — 22 June 2009

9 of 19

NXP Semiconductors

74AUP1G58

Low-power conﬁgurable multiple function gate

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL.

[3]

All speciﬁed values are the average typical values over all stated loads.

[4]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of the outputs.

CL = 30 pF

tpd

propagation delay

A, B and C to Y;

see Figure 12

[2]

VCC = 0.8 V

-

38.0

-

ns

VCC = 1.1 V to 1.3 V

4.5

10.5

20.8

4.1

21.9

24.1

ns

VCC = 1.4 V to 1.6 V

3.8

7.5

12.2

3.8

13.5

14.1

ns

VCC = 1.65 V to 1.95 V

3.4

6.3

10.0

3.1

11.2

11.9

ns

VCC = 2.3 V to 2.7 V

3.4

5.3

7.5

3.1

8.4

8.9

ns

VCC = 3.0 V to 3.6 V

3.3

5.0

6.6

2.9

7.1

7.4

ns

CL = 5 pF, 10 pF, 15 pF and 30 pF

CPD

power dissipation

capacitance

fi = 1 MHz; VI = GND to VCC

[3][4]

VCC = 0.8 V

-

2.7

-

pF

VCC = 1.1 V to 1.3 V

-

2.8

-

pF

VCC = 1.4 V to 1.6 V

-

3.0

-

pF

VCC = 1.65 V to 1.95 V

-

3.2

-

pF

VCC = 2.3 V to 2.7 V

-

3.8

-

pF

VCC = 3.0 V to 3.6 V

-

4.4

-

pF

Table 9.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.

Symbol Parameter

Conditions

25

°C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

(85

°C)

Max

(125

°C)

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Аналогичный номер детали - 74AUP1G58

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