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BC817DPN датащи(PDF) 3 Page - NXP Semiconductors |
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BC817DPN датащи(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 2002 Nov 22 3 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC817DPN THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Notes 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 208 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 20 V; IE = 0 − − 100 nA VCB = 20 V; IE = 0; Tj = 150 °C − − 5 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 1 V; IC = 100 mA; note 1 160 − 400 VCE = 1 V; IC = 500 mA; note 1 40 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 700 mV VBE base-emitter voltage VCE = 1 V; IC = 500 mA; notes 1 and 2 − − 1.2 V NPN transistor Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 5 − pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 − − MHz PNP transistor Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 9 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 80 − − MHz |
Аналогичный номер детали - BC817DPN |
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Аналогичное описание - BC817DPN |
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