BC849B datasheet(4/8 Pages) NXP

номер детали	BC849B

подробное описание детали	NPN general purpose transistors

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производитель	NXP [NXP Semiconductors]

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4 / 8 page

2004 Jan 16

4

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BC849; BC850

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Notes

1.

VBEsat decreases by about 1.7 mV/K with increasing temperature.

2.

VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 30 V

−

15

nA

IE = 0; VCB = 30 V; Tj = 150 °C

−

5

μA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

100

nA

hFE

DC current gain

IC = 10 μA; VCE = 5 V;

see Figs 2 and 3

BC849B; BC850B

−

240

−

BC849C; BC850C

−

450

−

DC current gain

IC = 2 mA; VCE = 5 V;

see Figs 2 and 3

BC849B; BC850B

200

290

450

BC849C; BC850C

420

520

800

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

90

250

mV

IC = 100 mA; IB = 5 mA

−

200

600

mV

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

mV

IC = 100 mA; IB = 5 mA; note 1

−

900

−

mV

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

580

660

700

mV

IC = 10 mA; VCE = 5 V; note 2

−

770

mV

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

−

pF

Ce

emitter capacitance

IC = ic = 0; VEB = 500 mV; f = 1 MHz −

11

−

pF

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−

MHz

F

noise figure

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 10 Hz to 15.7 kHz

−

4

dB

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

4

dB

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