BC857BM datasheet(4/10 Pages) NXP

номер детали	BC857BM

подробное описание детали	PNP general purpose transistors

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производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 10 page

2004 Mar 10

4

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC857M series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −30 V; IE = 0

−

−15

nA

VCB = −30 V; IE = 0; Tj = 150 °C

−

−5

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

nA

hFE

DC current gain

VCE = −5 V; IC = −2 mA

BC857AM

125

250

BC857BM

220

475

BC857CM

420

800

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600

−750

mV

IC = −10 mA; VCE = −5 V

−

−820

mV

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−

−200

mV

IC = −100 mA; IB = −5 mA; note 1

−

−400

mV

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz

−

2.5

pF

fT

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

100

−

MHz

F

noise figure

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz

−

10

dB

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