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DMG1013T датащи(PDF) 1 Page - Diodes Incorporated |
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DMG1013T датащи(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG1013T Document number: DS31784 Rev. 4 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 3kV • "Green" Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.002 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID -0.46 -0.33 A Pulsed Drain Current IDM -6 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 0.27 W Thermal Resistance, Junction to Ambient RθJA 461 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. SOT-523 TOP VIEW Equivalent Circuit TOP VIEW Source Gate Protection Diode Gate Drain G S D ESD PROTECTED TO 3kV Please click here to visit our online spice models database. |
Аналогичный номер детали - DMG1013T |
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Аналогичное описание - DMG1013T |
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