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PMEG2010AEJ датащит (Datasheet) 2 Page - NXP Semiconductors

№ деталь PMEG2010AEJ
подробность  20 V, 1 A very low VF MEGA Schottky barrier rectifier in SOD323F package
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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PMEG2010AEJ_3
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 January 2010
2 of 9
NXP Semiconductors
PMEG2010AEJ
20 V, 1 A very low VF MEGA Schottky barrier rectifier
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
1
cathode
[1]
2
anode
2
1
sym001
12
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMEG2010AEJ
SC-90
plastic surface mounted package; 2 leads
SOD323F
Table 4.
Marking codes
Type number
Marking code
PMEG2010AEJ
EM
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
20
V
IF
forward current
Tsp ≤ 55 °C-
1
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ≤ 0.25
-
5.5
A
IFSM
non-repetitive peak forward
current
square wave;
tp =8 ms
-10
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
360
mW
[2] -
830
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C




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